 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st. Edition January 1999 Features * Low on-resistance R DS(on) 0.15, VGS = 10V, ID = 3.0A * 4V gate drive devices. * High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK27 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy1 Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch(Tc=25C) Pch Tch Tstg Note2 Note2 Note1 Ratings 60 20 5 20 5 5 2.1 28 4 150 -55 to +150 Unit V V A A A A mJ W W C C 1. PW 10s, duty cycle 1 % 2. 4 devices poeration 3. Value at Tch=25C, Rg 50 2 4AK27 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min 60 20 -- -- 1.0 -- -- 3.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.12 0.15 5.5 390 190 45 10 42 90 55 1.0 60 Max -- -- 100 10 2.25 0.15 0.2 -- -- -- -- -- -- -- -- -- -- Unit Test Conditions V V A A V S pF pF pF ns ns ns ns V ns I F = 5A, VGS = 0 I F = 5A, VGS = 0 diF/ dt =50A/s I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VDS = 50 V, VGS = 0 VGS = 16V, VDS = 0 I D = 1mA, VDS = 10V I D = 3A, VGS = 10V Note4 I D = 3A, VGS = 4V Note4 I D = 3A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz VGS = 10V, ID = 3A RL = 10 3 4AK27 Main Characteristics Maximum Channel Dissipation Curve 6 Channel Dissipation Pch (W) Channel Dissipation Pch (W) Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 30 Maximum Channel Dissipation Curve Condition : Channel Dissipation of each die is identical 4 Device Operation 3 Device Operation 2 Device Operation 1 Device Operation 4 20 2 10 0 50 100 150 0 50 100 150 Ambient Temperature Tc (C) Case Temperature Tc (C) Typical Output Characteristics 10 10 V 5V 4V 3.5 V Pulse Test (A) 10 Typical Transfer Characteristics I D (A) 8 8 3V 6 V DS = 10 V Pulse Test ID Drain Current 2.5 V Drain Current 6 4 4 75 C 2 -25 C Tc = 25 C 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2 VGS = 2 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 4 4AK27 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Sasuration Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 1.0 Static Drain to Source State Resistance vs. Drain Current 1 Pulse Test 0.5 0.8 5A 0.6 0.2 4V 0.1 VGS = 10 V 0.4 2A 0.2 ID=1A 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 0.05 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) 50 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 2A Forward Transfer Admittance vs. Drain Current 20 10 5 V DS = 10 V Pulse Test 0.3 ID=5A V GS = 4 V 1A 0.2 2 1 0.5 0.1 Tc = -25 C 25 C 75 C 0.1 0 -40 10 V 5A 1A 2A 0 40 80 120 160 Case Temperature Tc (C) 0.2 0.5 1 2 5 10 Drain Current I D (A) 5 4AK27 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Capacitance C (pF) di/dt = 50 A/s, Ta = 25 C V GS = 0, Pulse Test Typical Capacitance vs. Drain to Source Voltage 1000 500 Ciss 200 100 50 200 100 50 Coss 20 10 5 0.1 Crss 20 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50 0.2 0.5 1 2 5 10 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 100 V DD = 50 V 25 V 10 V VDS VGS I D= 5 A 20 V DD = 10 V 25 V 50 V 4 8 12 16 Gate Charge Qg (nc) 4 0 20 20 Switching Characteristics 500 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % t d(off) tf tr t d(on) 10 5 0.1 80 16 Switching Time t (ns) 200 100 50 Drain to Source Voltage 60 12 40 8 Gate to Source Voltage 20 0 0.2 0.5 1 Drain Current 2 5 I D (A) 10 6 4AK27 Reverse Drain Current vs. Source to Drain Voltage Repetive Avalanche Energy E AR (mJ) 10 Reverse Drain Current I DR (A) Pulse Test 8 10 V V GS = 0, -5 V 4 5V 2.5 I AP = 5 A V DD = 25 V duty < 0.1 % Rg > 50 Maximun Avalanche Energy vs. Channel Temperature Derating 2 6 1.5 1 2 0.5 0 25 0 0.4 0.8 1.2 1.6 2.0 50 75 100 125 150 Drain to Source Voltage V DS (V) Channel Temperature Tch (C) Avalanche Test Circuit and Waveform EAR = 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 0 VDD 7 4AK27 Package Dimensions Unit: mm 26.5 0.3 4.0 0.2 2.5 10.5 0.5 10.0 0.3 1.5 0.2 1.82 2.54 1.4 0.55 0.1 0.55 -0.06 +0.1 1 2 3 4 5 6 7 8 9 10 Hitachi Code JEDEC EIAJ SP-10 -- -- 8 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
Price & Availability of 4AK27
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |